PART |
Description |
Maker |
IPSH6N03LB |
OptiMOS2 Power-Transistor
|
Infineon Technologies
|
IPP08CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP16CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
BSC059N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IPB16CN10NG IPP16CN10NG10 IPI16CN10NG IPD16CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP10N03LBG IPP10N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPF12N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
BSO094N03S |
OptiMOS2 Power-Transistor Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 9.1mOhm, 13A, LL
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSL205N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSB053N03LPG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
BSF053N03LTG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|